超高頻、大功率化合物半導(dǎo)體器件與集成技術(shù)基礎(chǔ)研究立項(xiàng)報(bào)告

劉新宇 侯繼強(qiáng) 武錦 金智 魏珂

摘 要：該研究針對(duì)我國(guó)信息處理和國(guó)家安全的重大需求，充分發(fā)揮化合物半導(dǎo)體超高頻、大功率方面的優(yōu)勢(shì)，并結(jié)合前期“973”項(xiàng)目的研究基礎(chǔ)，通過對(duì)化合物半導(dǎo)體材料原子級(jí)調(diào)控和生長(zhǎng)動(dòng)力學(xué)、納米尺度下載流子輸運(yùn)機(jī)理與行為規(guī)律、超高頻集成技術(shù)中信號(hào)傳輸機(jī)理與耦合機(jī)制等共性科學(xué)問題的深入研究，將新材料體系和新的功能結(jié)構(gòu)、集成技術(shù)及模型模擬等方面研究工作有機(jī)結(jié)合，多層次、綜合性地解決關(guān)鍵科學(xué)問題和技術(shù)瓶頸，從科學(xué)研究到技術(shù)創(chuàng)新形成綜合解決方案，取得一批自主知識(shí)產(chǎn)權(quán)和前沿性成果，研制出超高頻、大功率化合物半導(dǎo)體器件、電路和模塊，同時(shí)造就一支具有國(guó)際水平的創(chuàng)新團(tuán)隊(duì)，構(gòu)建超高頻、大功率化合物半導(dǎo)體電子器件集成應(yīng)用平臺(tái)，建立毫米波、發(fā)射功率大于30 W的數(shù)字收發(fā)演示系統(tǒng)，實(shí)現(xiàn)我國(guó)從器件研究到集成技術(shù)應(yīng)用的突破，從吉赫茲到太赫茲微電子器件和集成電路的可持續(xù)發(fā)展和創(chuàng)新跨越。

關(guān)鍵詞：超高頻 大功率 化合物半導(dǎo)體 集成技術(shù)

Abstract：This project aims at the major demand of Chinese information processing and national security， and give full play to the compound semiconductor ultra high frequency， large power advantages， combined with the research of the "973" project， through the deep research on the regulation of the compound semiconductor materials with atomic level and growth kinetics， nano scale carrier transport mechanism and behavior the mechanism of signal transmission， and the coupling mechanism of UHF integrated technology in general science problem， the new material system and function structure， a new integrated technology and model simulation research work organically， multi-level， comprehensive solutions to the key scientific and technical bottleneck， form a comprehensive solution from scientific research and technological innovation have a group of independent intellectual property rights， and frontier achievements， development of UHF， high-power compound semiconductor devices， circuit and module， also made an international level of innovation team， construction of ultra high frequency， integrated application platform for high power semiconductor electronic devices， the establishment of digital transceiver demo system of millimeter wave， the transmission power is greater than 30W the realization of China， to the application of integrated technology breakthrough from the device research， from Ji Hz to sustainable development and innovation of terahertz microelectronic devices and integrated circuits across.

Key Words：High Frequency；High Power；Compound Semiconductor；Circuittechnolo

閱讀全文鏈接（需實(shí)名注冊(cè)）：http：//www.nstrs.cn/xiangxiBG.aspx？id=50450&flag=1